Optimizing Post-Metal Annealing Temperature Considering Different Resistive Switching Mechanisms in Ferroelectric Tunnel Junction
Ryun‐Han Koo, Wonjun Shin, Kyung Kyu Min, Dongseok Kwon, Jae‐Joon Kim, Daewoong Kwon, Jong‐Ho Lee
Abstract
We investigate the effect of post-metal annealing temperature ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${T}_{\text {PMA}}$ </tex-math></inline-formula> ) on ferroelectric (FE) resistive switching (RS) and non-FE RS in HfOx ferroelectric tunnel junctions. Through conductance analysis and low-frequency noise spectroscopy, the effects of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${T}_{\text {PMA}}$ </tex-math></inline-formula> on RS mechanisms are demonstrated. It is revealed that the non-FE RS, redistribution of oxygen vacancies, is suppressed with an increase in <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${T}_{\text {PMA}}$ </tex-math></inline-formula> . The effects of different RS mechanisms on the tunneling electroresistance and cycling endurance characteristics are systematically investigated.