Enhanced Single-Photon Emission from GaN Quantum Dots in Bullseye Structures
Sijia Xia, Tomoyuki Aoki, Kang Gao, Munetaka Arita, Yasuhiko Arakawa, Mark Holmes
Abstract
We present the design, fabrication, and detailed characterization of a photonic bullseye structure to enhance the single-photon extraction efficiency from self-assembled GaN/AlN quantum dots (QDs) emitting in the UV. Through measurements of single-photon emission under saturated pulsed excitation at 80 MHz, we are able to evaluate photon extraction rates of up to ∼4.36 MHz into the first element of our NA = 0.4 objective lens. Such a rate clearly exceeds the theoretical maximum for an as-grown GaN/AlN QD, and far exceeds the literature values for GaN QDs measured under similar conditions. Our work shows the strong potential for improvement of III-nitride QD-based quantum emitters toward the development of quantum technologies.