Normally-off AlGaN/AlN/GaN HEMT with a composite recessed gate
Jialin Li, Yian Yin, Ni Zeng, Fengbo Liao, Mengxiao Lian, Xichen Zhang, Keming Zhang, Jingbo Li
Topics & Concepts
TransconductanceHigh-electron-mobility transistorMaterials scienceSaturation currentThreshold voltageOptoelectronicsComposite numberSaturation (graph theory)VoltageBreakdown voltageElectrical engineeringTransistorComposite materialEngineeringCombinatoricsMathematicsGaN-based semiconductor devices and materialsGa2O3 and related materialsSilicon Carbide Semiconductor Technologies