Vertical nanowire III–V MOSFETs with improved high‐frequency gain
Olli‐Pekka Kilpi, Markus Hellenbrand, Johannes Svensson, Erik Lind, Lars‐Erik Wernersson
Abstract
High‐frequency performance of vertical InAs/InGaAs heterostructure nanowire MOSFETs on Si is demonstrated for the first time for a gate‐last configuration. The device architecture allows highly asymmetric capacitances, which increases the power gain. A device with L g = 120 nm demonstrates f T = 120 GHz, f max = 130 GHz and maximum stable gain (MSG) = 14.4 dB at 20 GHz. These metrics demonstrate the state‐of‐the‐art performance of vertical nanowire MOSFETs.
Topics & Concepts
Materials scienceOptoelectronicsNanowireMOSFETHigh-gain antennaElectrical engineeringElectronic engineeringEngineering physicsPhysicsEngineeringVoltageTransistorSemiconductor materials and devicesAdvancements in Semiconductor Devices and Circuit DesignNanowire Synthesis and Applications