A High‐Speed True Random Number Generator Based on a Cu<sub><i>x</i></sub>Te<sub>1−<i>x</i></sub> Diffusive Memristor
Kyung Seok Woo, Jaehyun Kim, Janguk Han, Jin Myung Choi, Woohyun Kim, Cheol Seong Hwang
Abstract
Herein, a true random number generator (TRNG) based on a Cu x Te 1− x diffusive memristor (DM) using its threshold switching (TS) behavior is reported. The intrinsic stochasticity of the TS behavior contributes to the randomness of the TRNG system. The switching behavior is discussed through field‐induced nucleation theory and surface diffusion dynamics. Demonstrating the performance of TRNG as a hardware security application, the DM‐based TRNG passes all 15 National Institute of Standards and Technology randomness tests without any post‐processing step, even in high‐temperature conditions. Moreover, a nonlinear‐feedback shift register is implemented for a high‐speed TRNG, producing the highest rate among the reported volatile‐memristor‐based TRNGs.