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Effects of change of oxygen vacancy on hysteresis voltage and stability under time-temperature dependence positive bias stress in amorphous SZTO transistors

M. Balaji, Sang Yeol Lee

2021Microelectronic Engineering21 citationsDOI

Topics & Concepts

Materials scienceThreshold voltageThin-film transistorAmorphous solidHysteresisAcceptorSputteringOxygenCondensed matter physicsOptoelectronicsTransistorVoltageThin filmChemistryNanotechnologyLayer (electronics)Electrical engineeringCrystallographyPhysicsEngineeringOrganic chemistryThin-Film Transistor TechnologiesZnO doping and propertiesSilicon and Solar Cell Technologies
Effects of change of oxygen vacancy on hysteresis voltage and stability under time-temperature dependence positive bias stress in amorphous SZTO transistors | Litcius