Analysis of dominant non-radiative recombination mechanisms in InGaN green LEDs grown on silicon substrates
Quanjiang Lv, Jiang-Dong Gao, Xixia Tao, Jianli Zhang, Chunlan Mo, Xiaolan Wang, Changda Zheng, Junlin Liu
Topics & Concepts
Voltage droopOptoelectronicsAuger effectQuantum efficiencyLight-emitting diodeMaterials scienceSpontaneous emissionCarrier generation and recombinationRecombinationQuantum tunnellingSiliconRadiative transferChemistryAugerSemiconductorPhysicsAtomic physicsOpticsVoltageBiochemistryQuantum mechanicsGeneVoltage dividerLaserGaN-based semiconductor devices and materialsSemiconductor Quantum Structures and DevicesPhotocathodes and Microchannel Plates