A MOS-DTMOS Implementation of Floating Memristor Emulator for High-Frequency Applications
Y. R. Ananda, Nehal Raj, Gaurav Trivedi
Abstract
The work presented in this article focuses on designing a floating MOS-dynamic threshold voltage MOSFET (DTMOS)-based circuit to emulate a memristor. The proposed circuit consists of four transistors, including a DT-MOSFET and an external capacitor, which helps obtain high-frequency operations up to 3 MHz. This facilitates easier integration of the devices and monolithic IC fabrication. The correctness of the proposed emulator is validated by conducting various parametric analyses at different operating frequencies and process corners, and it generates acceptable pinched hysteresis loops (PHLs) at various frequencies. Furthermore, pre- and post-layout validation of the proposed emulator are also performed using Cadence Virtuoso with Taiwan Semiconductor Manufacturing Company (TSMC) 180-nm process design kits (PDKs) to prove its effectiveness as a memristor. The area and power consumption of the proposed emulator are <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$157.48~\mu \text {m}^{2}$ </tex-math></inline-formula> and <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$8.24~\mu \text {W}$ </tex-math></inline-formula> , respectively. The physical experiment of the proposed memristor emulator is performed using ALD <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$1106~n$ </tex-math></inline-formula> -channel MOSFETs to characterize its functionality as a real-life memristor. It is also used in designing a memristor-based application to showcase its applicability in power and area optimal circuit design.