Enhanced carrier mobility and interface charge transfer in Bi–MoS2 heterojunctions induced by point defects
Meng Lin, Jieshi Chen, Zhixin Hou, Xinyu Wang, Xuerong Shi, Kaiwei Wu, Chun Yu, Hao Lü, Kai Xiong
Topics & Concepts
HeterojunctionVacancy defectMaterials scienceCharge carrierCondensed matter physicsElectronCrystallographic defectFermi levelAtomic orbitalChemistryOptoelectronicsPhysicsQuantum mechanics2D Materials and ApplicationsChalcogenide Semiconductor Thin FilmsMXene and MAX Phase Materials