22FDSOI device towards RF and mmWave applications
Zhixing Zhao, Steffen Lehmann, W. L. Oo, Amit Kumar Sahoo, Shafi Syed, Quang Huy Lê, Dang Khoa Huynh, Talha Chohan, Dirk Utess, Dominik Kleimaier, Maciej Wiatr, Sabine Kolodinski, J. Mazurier, Jan Hoentschel, Andreas Knorr, Ned Cahoon, Stefan Kneitz
Abstract
This paper presents 22FDSOI device RF performance figure of merit dependencies on the design parameters, such as gate length, width per finger, number of fingers, centerline poly pitch, as well as the vertical gate repetition. With a proper design parameters combination, the device can achieve as high as 413 GHz of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$f_{MAX}$</tex> . As a circuit demonstration, a 2-stage 2-stack power amplifier achieves an output power of 20.2 dBm and 32 % peak PAE at 28 GHz.