Influence of Al2O3 layer on InGaZnO memristor crossbar array for neuromorphic applications
Woo Sik Choi, Jun Tae Jang, Donguk Kim, Tae Jun Yang, Changwook Kim, Hyungjin Kim, Dae Hwan Kim
Topics & Concepts
Neuromorphic engineeringCrossbar switchMemristorLayer (electronics)Polarity (international relations)Materials scienceOptoelectronicsVoltagePower consumptionPower (physics)Schottky barrierElectronic engineeringComputer scienceElectrical engineeringNanotechnologyArtificial neural networkPhysicsEngineeringChemistryArtificial intelligenceDiodeBiochemistryCellQuantum mechanicsAdvanced Memory and Neural ComputingFerroelectric and Negative Capacitance DevicesNeuroscience and Neural Engineering