Analysis of 4H-SiC MOSFET with distinct high-k/4H-SiC interfaces under high temperature and carrier-trapping conditions
H. Bencherif, F. Pezzimenti, L. Dehimi, Francesco G. Della Corte
Topics & Concepts
Materials scienceOptoelectronicsTransistorMOSFETGate oxideLeakage (economics)DielectricHigh-κ dielectricReliability (semiconductor)VoltageElectrical engineeringPower (physics)EngineeringQuantum mechanicsEconomicsPhysicsMacroeconomicsSilicon Carbide Semiconductor TechnologiesSemiconductor materials and devicesCopper Interconnects and Reliability