Gate and Bias Voltage‐Modulation Photodetector Based on Cs<sub>3</sub>Bi<sub>2</sub>Br<sub>9</sub> for Multifunctional Optoelectronic Logic Gate
Xiaoxian Song, Chao Li, Xuanqi Zhong, Ruihuan Zhang, Tianchen Ji, Xun Liu, Wenyao Wu, Haiting Zhang, Liping Liu, Ning Chen, Jingjing Zhang, Zijie Dai, Yunxia Ye, Xudong Ren, Jianquan Yao
Abstract
Abstract Optoelectronic logic gates (OELGs) are considered a promising alternative to traditional electronic logic gates, thanks to their high computational speed and low power consumption. Meanwhile, there are enormous challenges including complex structures and single‐function. In this study, the optoelectronic logic gate device is prepared merely through a single Cs 3 Bi 2 Br 9 photodetector. The bidirectional photoresponsive behavior of the device is exhibited under bias voltages and the logic gates of the device are modulated by the change of the current level. The five fundamental OELGs (AND, OR, NOR, NOT, and NAND) are demonstrated successfully by applying a bias voltage of ±1 mV. Moreover, the five OELGs can be modulated by adjusting the gate voltage. To create a multifunctional logic gate array platform, a 5 × 5 array is constructed with 100% accuracy for the five basic OELGs. For practical applications, these logic gate arrays demonstrate great potential in imaging and image logic processing.