Polarization switching in sliding ferroelectrics: Roles of fluctuation and domain wall
Ziwen Wang, Shuai Dong
Abstract
Sliding ferroelectricity is highly attractive for its low energy barriers and fatigue resistance. As the origin of these exotic properties, its unconventional switching dynamics remains poorly understood: how an electric field drives a perpendicular sliding? Taking $h$-BN bilayer as a model system, its switching dynamics is studied using \textit{ab initio} calculations. The off-diagonal Born effective charge leads to the perpendicular relationship between the electric field and ionic movements. Interestingly, the rules of intrinsic coercive field are distinct between $h$-BN bilayer and conventional ferroelectrics. For $h$-BN bilayer, any perturbation breaking the in-plane symmetry plays a key role to assist the avalanche-like switching dynamics. Moreover, the exotic large off-diagonal Born effective charge near the $P=0$ intermediate state results in a wriggling motion of domain walls in $h$-BN bilayer. Our results reveal the key factors in the ferroelectric switching of sliding ferroelectrics at room temperature.