A comprehensive review of recent progress on enhancement-mode β-Ga<sub>2</sub>O<sub>3</sub> FETs: Growth, devices and properties
Botong Li, Xiaodong Zhang, Li Zhang, Yongjian Ma, Wenbo Tang, Tiwei Chen, Yu Hu, Xin Zhou, Chunxu Bian, Chunhong Zeng, Tao Ju, Zhongming Zeng, Baoshun Zhang
Abstract
Abstract Power electronic devices are of great importance in modern society. After decades of development, Si power devices have approached their material limits with only incremental improvements and large conversion losses. As the demand for electronic components with high efficiency dramatically increasing, new materials are needed for power device fabrication. Beta-phase gallium oxide, an ultra-wide bandgap semiconductor, has been considered as a promising candidate, and various β -Ga 2 O 3 power devices with high breakdown voltages have been demonstrated. However, the realization of enhancement-mode (E-mode) β -Ga 2 O 3 field-effect transistors (FETs) is still challenging, which is a critical problem for a myriad of power electronic applications. Recently, researchers have made some progress on E-mode β -Ga 2 O 3 FETs via various methods, and several novel structures have been fabricated. This article gives a review of the material growth, devices and properties of these E-mode β -Ga 2 O 3 FETs. The key challenges and future directions in E-mode β -Ga 2 O 3 FETs are also discussed.