Electronic transport, metal-insulator transition, and Wigner crystallization in transition metal dichalcogenide monolayers
Yi Huang, S. Das Sarma
Abstract
By analyzing transport data from high-mobility transition metal dichalcogenide (TMD) WSe${}_{2}$ monolayers and considering realistic disorder scattering, the authors explain here the observed nonmonotonic carrier density dependence of mobility and the linear temperature-dependent resistivity in the metallic phase. They theoretically examine the metal-insulator transition (MIT) critical density and the melting temperature of Wigner crystallization (WC), suggesting that the observed two-dimensional low-density MIT likely results from the complex interplay between disorder effects and interaction-driven WC physics.
Topics & Concepts
Transition metalMonolayerCrystallizationCondensed matter physicsMaterials scienceMetal–insulator transitionChemical physicsMetalNanotechnologyChemistryMetallurgyPhysicsThermodynamicsCatalysisBiochemistry2D Materials and Applications