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Surface relaxation and photoelectric absorption effects on synchrotron X-ray topographic images of dislocations lying on the basal plane in off-axis 4H-SiC crystals

Tuerxun Ailihumaer, Hongyu Peng, Fumihiro Fujie, Balaji Raghothamachar, Michael Dudley, Shunta Harada, Toru Ujihara

2021Materials Science and Engineering B13 citationsDOIOpen Access PDF

Topics & Concepts

DiffractionDislocationSynchrotronOpticsMaterials sciencePenetration depthAbsorption (acoustics)Relaxation (psychology)Crystal (programming language)Photoelectric effectX-rayContrast (vision)Condensed matter physicsMolecular physicsCrystallographyPhysicsChemistryProgramming languagePsychologyComputer scienceSocial psychologyComposite materialSilicon Carbide Semiconductor TechnologiesSilicon and Solar Cell TechnologiesSemiconductor materials and interfaces
Surface relaxation and photoelectric absorption effects on synchrotron X-ray topographic images of dislocations lying on the basal plane in off-axis 4H-SiC crystals | Litcius