50 mm diameter Sn-doped (0 0 1) β-Ga2O3 crystal growth using the vertical Bridgeman technique in ambient air
K. Hoshikawa, Takumi Kobayashi, Etsuko Ohba, Takumi Kobayashi
Topics & Concepts
WaferMaterials scienceDopingAnalytical Chemistry (journal)Electrical resistivity and conductivityDislocationCrystal (programming language)Full width at half maximumMineralogyCrystallographyOpticsChemistryOptoelectronicsComposite materialPhysicsEngineeringComputer scienceElectrical engineeringChromatographyProgramming languageGa2O3 and related materialsZnO doping and propertiesAdvanced Photocatalysis Techniques