Electrode dependence in halide perovskite memories: resistive switching behaviours
Gregory Soon How Thien, Mohd Arif Mohd Sarjidan, Noor Azrina Talik, Boon Tong Goh, Boon Kar Yap, Zhicai He, Kah‐Yoong Chan
Abstract
In halide perovskite resistive switching memories, the top electrode material influences resistive switching features such as bipolar and unipolar switching, multilayer, and write-once-read-many behaviour.
Topics & Concepts
HalidePerovskite (structure)Resistive touchscreenMaterials scienceElectrodeOptoelectronicsResistive random-access memoryInorganic chemistryElectrical engineeringChemistryCrystallographyEngineeringPhysical chemistryAdvanced Memory and Neural ComputingPerovskite Materials and ApplicationsTransition Metal Oxide Nanomaterials