Large-size (1.7 × 1.7 mm<sup>2</sup>) β-Ga<sub>2</sub>O<sub>3</sub> field-plated trench MOS-type Schottky barrier diodes with 1.2 kV breakdown voltage and 10<sup>9</sup> high on/off current ratio
Fumio Otsuka, Hironobu Miyamoto, Akio Takatsuka, Shinji Kunori, Kohei Sasaki, Akito Kuramata
Abstract
Abstract We fabricated high forward and low leakage current trench MOS-type Schottky barrier diodes (MOSSBDs) in combination with a field plate on a 12 μ m thick epitaxial layer grown by halide vapor phase epitaxy on β -Ga 2 O 3 (001) substrate. The MOSSBDs, measuring 1.7 × 1.7 mm 2 , exhibited a forward current of 2 A (70 A cm −2 ) at 2 V forward voltage and a leakage current of 5.7 × 10 –10 A at −1.2 kV reverse voltage (on/off current ratio of > 10 9 ) with an ideality factor of 1.05 and wafer-level specific on-resistance of 17.1 mΩ · cm 2 .
Topics & Concepts
TrenchSchottky diodeMaterials scienceEpitaxyDiodeOptoelectronicsReverse leakage currentBreakdown voltageSchottky barrierWaferSubstrate (aquarium)Leakage (economics)Analytical Chemistry (journal)VoltageLayer (electronics)ChemistryElectrical engineeringNanotechnologyMacroeconomicsOceanographyChromatographyEconomicsGeologyEngineeringGa2O3 and related materialsZnO doping and propertiesElectronic and Structural Properties of Oxides