MBE growth of mid-wavelength type II InAs/InAsSb superlattice photodetectors with wet etching and Al2O3 passivation
Bingfeng Liu, Lianqing Zhu, Lidan Lu, Weiqiang Chen, Ruixin Gong, Ning Xie, Mingliang Gong, Qingsong Feng, Chen Yang, Xiantong Zheng, Mingli Dong
Topics & Concepts
PassivationMaterials scienceOptoelectronicsPhotodetectorSuperlatticeMolecular beam epitaxyPhotoluminescenceBand gapEtching (microfabrication)FabricationDark currentGallium antimonideWavelengthEpitaxyLayer (electronics)OpticsNanotechnologyAlternative medicineMedicinePhysicsPathologyAdvanced Semiconductor Detectors and MaterialsSemiconductor Quantum Structures and DevicesAdvanced Optical Sensing Technologies