Defect‐Enhanced Polarization Switching in the Improper Ferroelectric LuFeO<sub>3</sub>
Petrucio Barrozo, Didrik R. Småbråten, Yun‐Long Tang, Bhagwati Prasad, Sahar Saremi, Rüstem Özgür, Vishal Thakare, Rachel Steinhardt, Megan E. Holtz, Vladimir A. Stoica, Lane W. Martin, Darrell G. Schlom, Sverre M. Selbach, R. Ramesh
Abstract
Abstract Results of switching behavior of the improper ferroelectric LuFeO 3 are presented. Using a model set of films prepared under controlled chemical and growth‐rate conditions, it is shown that defects can reduce the quasi‐static switching voltage by up to 40% in qualitative agreement with first‐principles calculations. Switching studies show that the coercive field has a stronger frequency dispersion for the improper ferroelectrics compared to a proper ferroelectric such as PbTiO 3 . It is concluded that the primary structural order parameter controls the switching dynamics of such improper ferroelectrics.