Synergistic Approach of Interfacial Layer Engineering and READ-Voltage Optimization in HfO<sub>2</sub>-Based FeFETs for In-Memory-Computing Applications
Yannick Raffel, Sourav De, Maximilian Lederer, Ricardo Olivo, Raik Hoffmann, Sunanda Thunder, Luca Pirro, Sven Beyer, Talha Chohan, Thomas Kämpfe, Konrad Seidel, Johannes Heitmann
Abstract
) data set in the presence of flicker noise and retention degradation, which is only a 2.5% deviation from the software baseline.
Topics & Concepts
Neuromorphic engineeringMaterials scienceElectronic engineeringArtificial neural networkComputer scienceNoise (video)MNIST databaseOptoelectronicsEngineeringArtificial intelligenceImage (mathematics)Ferroelectric and Negative Capacitance DevicesAdvanced Memory and Neural ComputingSemiconductor materials and devices