Electronic and magnetic properties of GeS monolayer effected by point defects and doping
Phuong Thuy Bui, Võ Văn Ớn, J. Guerrero-Sánchez, D.M. Hoat
Abstract
. In these cases, the magnetism originates mainly from P and As impurities. The obtained results suggest an efficient approach to functionalize the GeS monolayer for optoelectronic and spintronic applications.
Topics & Concepts
MonolayerDopingMagnetic momentCondensed matter physicsMaterials scienceMagnetic semiconductorVacancy defectMagnetismSemiconductorDopantBand gapImpuritySpin polarizationFerromagnetismNanotechnologyChemistryOptoelectronicsPhysicsElectronQuantum mechanicsOrganic chemistry2D Materials and ApplicationsQuantum Dots Synthesis And PropertiesZnO doping and properties