8 A, 200 V normally-off cascode GaN-on-Si HEMT: From epitaxy to double pulse testing
Rijo Baby, Manish Mandal, Shamibrota K. Roy, Abheek Bardhan, R. Muralidharan, Kaushik Basu, Srinivasan Raghavan, Digbijoy N. Nath
Topics & Concepts
Materials scienceCascodeOptoelectronicsHigh-electron-mobility transistorPassivationBreakdown voltageTransistorElectrical engineeringLayer (electronics)VoltageNanotechnologyAmplifierCMOSEngineeringGaN-based semiconductor devices and materialsGa2O3 and related materialsRadio Frequency Integrated Circuit Design