Exploring the feasibility and conduction mechanisms of P-type nitrogen-doped β-Ga<sub>2</sub>O<sub>3</sub> with high hole mobility
Congcong Ma, Zhengyuan Wu, Zhuoxun Jiang, Ying Chen, Wei Ruan, Hao Zhang, Heyuan Zhu, Guoqi Zhang, Junyong Kang, Tong‐Yi Zhang, Junhao Chu, Zhilai Fang
Abstract
The feasibility and conductivity mechanisms of p-type N-doped β-Ga 2 O 3 are demonstrated and clarified using first-principles hybrid functional calculations and the phase transition technique.
Topics & Concepts
Materials scienceDopingConductivityThermal conductionType (biology)NitrogenPhase transitionPhase (matter)Electron mobilityCondensed matter physicsOptoelectronicsPhysical chemistryPhysicsComposite materialQuantum mechanicsChemistryBiologyEcologyGa2O3 and related materialsAdvanced Photocatalysis TechniquesZnO doping and properties