Domain state exchange bias in a single layer FeRh thin film formed <i>via</i> low energy ion implantation
Cory D. Cress, Olaf van ’t Erve, Joseph Prestigiacomo, Samuel W. LaGasse, Artur Glavic, Valeria Lauter, Steven P. Bennett
Abstract
Low-energy ion implantation is used to form a single-layer exchanged biased FeRh film. Neutron scattering measurements confirm the presence of pinned uncompensated moments and magnetic domains consistent with a domain state exchange bias system.
Topics & Concepts
Materials scienceThin filmCondensed matter physicsLayer (electronics)IonExchange biasThin layerDomain (mathematical analysis)Low energySingle domainEnergy (signal processing)Magnetic domainAtomic physicsNanotechnologyMagnetic fieldMagnetic anisotropyPhysicsMagnetizationMathematical analysisMathematicsQuantum mechanicsMagnetic properties of thin filmsSemiconductor materials and devicesAdvanced Memory and Neural Computing