Realizing Bidirectional Photocurrent in Monolithic Dual‐Mode Device for Neuromorphic Vision and Logically‐Encrypted Transmission
Min Jiang, Yukun Zhao, Lifeng Bian, Wei Chen, Yang Kang, Min Zhou, Jianya Zhang, Yudie Wang, Haiding Sun, Shulong Lu
Abstract
Abstract Due to significant response contradictions, unidirectional carrier transmission of typical semiconductor p‐n junctions limits integrated sensors and artificial synapses in a monolithic device. In this work, a bipolar p‐n junction designed by employing the hydrogel/p‐GaN local contact interface with p‐GaN/(In,Ga)N heterojunction, demonstrating the bidirectional photocurrent and sensor/artificial synapse dual‐mode device successfully. After modifying Au nanoparticles, the negative (positive) photocurrent is increased by 900% (300%) under 365 nm (520 nm) light to achieve a more balanced bipolar carrier dynamic. Such a regulation of photocurrent is found to be attributed to the promotion of hydrogen evolution reaction (HER) at the hydrogel/Au/p‐GaN interface. Thus, the device achieves the ultrahigh paired‐pulse facilitation (PPF) index of 243% under self‐powered condition. Moreover, the implementation of plasticity from short‐term to long‐term demonstrates its adaptability in neural morphology visual recognition. Beyond independent working mode, the function of five classic logic gates is achieved under three‐terminal operation. Finally, an encrypted wireless communication system using dual‐channel light signals demonstrates the extensive application potential of the monolithic device. Therefore, this work presents a viable construction blueprint to meet the demands of next‐generation all‐in‐one optoelectronics for intricate application scenarios.