Rare-earth ion doped Al<sub>2</sub>O<sub>3</sub> for active integrated photonics
Ward Hendriks, Lantian Chang, Carlijn I. van Emmerik, Jinfeng Mu, Michiel de Goede, Meindert Dijkstra, Sonia M. García‐Blanco
Abstract
Aluminum oxide (Al2O3) is an emerging material in integrated photonics. It exhibits a very broad transparency window from the UV to the mid-IR, very low propagation losses and a high solubility for rare-earth ions leading to optical gain in different spectral ranges. Al2O3 can be deposited by different wafer-level deposition techniques, including atomic layer deposition and reactive magnetron sputtering, being compatible with the monolithic integration onto passive integrated photonics platforms, such as Si3N4, to which it provides optical amplification and lasing. When deposited at low temperatures, it is also compatible with integration onto CMOS chips. In this review, the state-of-the-art on the deposition, integration and device development in this photonic platform is described.