Single-crystal 3C-SiC-on-insulator platform for integrated quantum photonics
Yanan Wang, Qiang Lin, Philip X.‐L. Feng
Abstract
Photonic quantum information processing and communication demand highly integrated device platforms, which can offer high-fidelity control of quantum states and seamless interface with fiber-optic networks simultaneously. Exploiting the unique quantum emitter characteristics compatible with photonic transduction, combined with the outstanding nonlinear optical properties of silicon carbide (SiC), we propose and numerically investigate a single-crystal cubic SiC-on-insulator (3C-SiCOI) platform toward multi-functional integrated quantum photonic circuit. Benchmarking with the state-of-the-art demonstrations on individual components, we have systematically engineered and optimized device specifications and functions, including state control via cavity quantum electrodynamics and frequency conversion between quantum emission and telecommunication wavelengths, while also considering the manufacturing aspects. This work will provide concrete guidelines and quantitative design considerations for realizing future SiCOI integrated photonic circuitry toward quantum information applications.