High performance, electroforming-free, thin film memristors using ionic Na<sub>0.5</sub>Bi<sub>0.5</sub>TiO<sub>3</sub>
Chao Yun, Matthew Webb, Weiwei Li, Rui Wu, Ming Xiao, Markus Hellenbrand, A. Kuršumović, Hongyi Dou, Xingyao Gao, Samyak Dhole, Di Zhang, Aiping Chen, Jueli Shi, Kelvin H. L. Zhang, Haiyan Wang, Q. X. Jia, Judith L. MacManus‐Driscoll
Abstract
Interfacial resistive switching and composition-tunable R LRS are realized in ionically conducting Na 0.5 Bi 0.5 TiO 3 thin films, allowing optimised ON/OFF ratio (>10 4 ) to be achieved with low growth temperature (600 °C) and low thickness (<20 nm).
Topics & Concepts
ElectroformingMaterials scienceThin filmResistive touchscreenIonic bondingMemristorChemical engineeringIonic conductivityOptoelectronicsAnalytical Chemistry (journal)NanotechnologyIonElectrodeElectronic engineeringElectrolyteElectrical engineeringPhysical chemistryChromatographyLayer (electronics)Quantum mechanicsChemistryPhysicsEngineeringAdvanced Memory and Neural ComputingFerroelectric and Negative Capacitance DevicesTransition Metal Oxide Nanomaterials