Emerging Group‐VI Elemental 2D Materials: Preparations, Properties, and Device Applications
Ziyuan Lin, Cong Wang, Yang Chai
Abstract
Due to the ultrathin thickness and dangling-bond-free surface, 2D materials have been regarded as promising candidates for future nanoelectronics. In recent years, group-VI elemental 2D materials have been rediscovered and found superior in electrical properties (e.g., high carrier mobility, high photoconductivity, and thermoelectric response). The outstanding semiconducting properties of group-VI elemental 2D materials enable device applications including high-performance field-effect transistors and optoelectronic devices. The excellent environmental stability also facilitates fundamental studies and practical applications of group-VI elemental 2D materials. This Review first focuses on the crystal structures of group-VI elemental 2D materials. Afterward, preparation methods for nanostructures of group-VI materials are introduced with comprehensive studies. A brief Review of the electronic structures is then presented with an understanding of the electrical properties. This Review also contains the device applications of group-VI elemental 2D materials, emphasizing transistors, photodetectors, and other appealing applications. Finally, this Review provides an outlook for the development of group-VI elemental 2D materials, highlighting the challenges and opportunities in fundamental studies and technological applications.