Ultra-thin Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Ferroelectric Tunnel Junction with High Current Density
Yueh-Hua Chu, Hsin‐Hui Huang, Yuhao Chen, Chien-Hua Hsu, Pei-Jer Tzeng, Shyh-Shyuan Sheu, Wei‐Chung Lo, Chih‐I Wu, Tuo‐Hung Hou
Abstract
Ferroelectric tunnel junction (FTJ) with ultrathin 3 nm-thick Hf <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.5</sub> Zr <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.5</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> (HZO) is investigated. The high current density up to 100 A/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> is at least 10 times higher than that in previously reported HZO FTJs. It is suitable for future nanoscale FTJ with a GΩ cell resistance for the application of in-memory computing. The insertion of a thin Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> interfacial layer is found critical to alter the switching polarity and increase current density.