Abnormal Out-of-Plane Vibrational Raman Mode in Electrochemically Intercalated Multilayer MoS<sub>2</sub>
Yufei Sun, Shujia Yin, Ruixuan Peng, Jia Liang, Xin Cong, Yi Li, Chenyu Li, Bolun Wang, Miao‐Ling Lin, Ping‐Heng Tan, Chunlei Wan, Kai Liu
Abstract
Raman spectroscopy is a powerful technique to probe structural and doping behaviors of two-dimensional (2D) materials. In MoS 2, the always coexisting in-plane (E 2g 1 ) and out-of-plane (A 1g ) vibrational modes are used as reliable fingerprints to distinguish the number of layers, strains, and doping levels. In this work, however, we report an abnormal Raman behavior, i.e., the absence of the A 1g mode in cetyltrimethylammonium bromide (CTAB)-intercalated MoS 2 superlattice. This unusual behavior is quite different from the softening of the A 1g mode induced by surface engineering or electric-field gating. Interestingly, under a strong laser illumination, heating, or mechanical indentation, an A 1g peak gradually appears, accompanied by the migration of intercalated CTA + cations. The abnormal Raman behavior is mainly attributed to the constraint of the out-of-plane vibration due to intercalations and resulting severe electron doping. Our work renews the understanding of Raman spectra of 2D semiconducting materials and sheds light on developing next-generation devices with tunable structures.