Self-Selective Resistive Device With Hybrid Switching Mode for Passive Crossbar Memory Application
Zongwei Wang, Jian Kang, Guandong Bai, Guofang Zhong, Bowen Wang, Yaotian Ling, Qingyu Chen, Lin Bao, Lindong Wu, Yimao Cai, John Robertson, Ru Huang
Abstract
In this letter, we experimentally demonstrated a novel resistive device with a hybrid switching mode that can be alternated between volatile threshold switching and non-volatile resistive switching. The device consists of dual-functional layers VO2 /HfO2 sandwiched by symmetrical TiN electrodes. A >20 unified ratio for selectivity and memory window is obtained. Owing to the stable resistive behavior of HfO2 and insulator-metal transition of VO2, the device shows excellent uniform switching parameters in both switching modes with a high on-state current density (1E4 A/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> ) and fast switching/recovery speed (<; 30 ns). This self-selective resistive memory is of great potential in the high-density crossbar array, particularly for the future 3D-Vertical resistive random access memory (RRAM) integration.