Integration of 3-Level MoS Multibridge Channel FET With 2D Layered Contact and Gate Dielectric<sub/>
S. Hitesh, Pushkar Dasika, Kenji Watanabe, Takashi Taniguchi, Kausik Majumdar
Abstract
Multi-bridge channel field effect transistor (MBCFET) provides several advantages over FinFET technology and is an attractive solution for sub-5 nm technology nodes. MBCFET is a natural choice for devices that use semiconducting layered materials (such as, MoS2) as the channel due to their dangling-bond-free ultra-thin nature and the possibility of layer-by-layer transfer. MoS2-based MBCFET is thus an attractive proposition for drive current boost without compromising on the electrostatics and footprint. Here we demonstrate a 3-level MoS2 MBCFET, where each vertically stacked channel is dual-gated to achieve a saturation current of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$174.9~ \boldsymbol \mu \text{A}$ </tex-math></inline-formula> (which translates to <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$90~ \boldsymbol \mu \text{A}$ </tex-math></inline-formula> per <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\boldsymbol \mu \text{m}$ </tex-math></inline-formula> footprint width (@ <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$2.7~ \boldsymbol \mu \text{m}$ </tex-math></inline-formula> channel length), a near-ideal sub-threshold slope of 63 mV/dec, and an on-off ratio lpzrptGreater108. This work sets the benchmark for layer-material-based MBCFET in terms of the number of parallel channels integrated, simultaneously providing high drive current and excellent electrostatic control.