Structural and Electrical Response of Emerging Memories Exposed to Heavy Ion Radiation
Tobias Vogel, Alexander Zintler, Nico Kaiser, Nicolas Guillaume, Gauthier Lefèvre, Maximilian Lederer, A. Serra, Eszter Piros, Tae‐Wook Kim, Philipp Schreyer, Robert Winkler, Déspina Nasiou, Ricardo Olivo, Tarek Ali, David Lehninger, Alexey Arzumanov, C. Charpin-Nicolle, G. Bourgeois, L. Grenouillet, M. C. Cyrille, G. Navarro, Konrad Seidel, Thomas Kämpfe, Stefan Petzold, C. Trautmann, Leopoldo Molina‐Luna, Lambert Alff
Abstract
-, as well as GeSbTe-based thin films. This study reveals that the initial crystallinity, composition, and microstructure of the memory materials have a fundamental influence on their interaction with Au swift heavy ions. With this, we provide a test protocol for irradiation experiments of hafnium oxide- and GeSbTe-based emerging memories, combining structural investigations by X-ray diffraction on a macroscopic, scanning transmission electron microscopy on a microscopic scale, and electrical characterization of real devices. Such fundamental studies can be also of importance for future applications, considering the transition of digital to analog memories with a multitude of resistance states.