Effect of pulsed ion-beam treatment on the electronic and optical properties of GaN epitaxial films on sapphire
D. A. Zatsepin, Danil W. Boukhvalov, Е. А. Бунтов, A. F. Zatsepin, R. I. Batalov, H. A. Novikov, R. M. Bayazitov
Topics & Concepts
SapphireX-ray photoelectron spectroscopyMaterials scienceEpitaxyVacancy defectPhotoluminescenceBand gapAnalytical Chemistry (journal)Ion beamMolecular beam epitaxyOptoelectronicsAbsorption edgeAnnealing (glass)IrradiationIonNanotechnologyCrystallographyChemistryOpticsChemical engineeringComposite materialChromatographyEngineeringLayer (electronics)LaserNuclear physicsPhysicsOrganic chemistryGaN-based semiconductor devices and materialsGa2O3 and related materialsSemiconductor materials and devices