Atomic-Layer-Deposited SiO<i><sub>x</sub></i>/SnO<i><sub>x</sub></i> Nanolaminate Structure for Moisture and Hydrogen Gas Diffusion Barriers
Ju-Hwan Han, Seonghyeon Lee, Seok-Goo Jeong, Dong-Yeon Kim, Hae Lin Yang, Seung-Hwan Lee, Seung Yeon Yoo, Inho Park, Ho Bum Park, Kwang-Su Lim, Won-Jae Yang, Hyunchul Choi, Jin‐Seong Park
Abstract
High-density SnOx and SiOx thin films were deposited via atomic layer deposition (ALD) at low temperatures (100 °C) using tetrakis(dimethylamino)tin(IV) (TDMASn) and di-isopropylaminosilane (DIPAS) as precursors and hydrogen peroxide (H2O2) and O2 plasma as reactants, respectively. The thin-film encapsulation (TFE) properties of SnOx and SiOx were demonstrated with thickness dependence measurements of the water vapor transmission rate (WVTR) evaluated at 50 °C and 90% relative humidity, and different TFE performance tendencies were observed between thermal and plasma ALD SnOx. The film density, crystallinity, and pinholes formed in the SnOx film appeared to be closely related to the diffusion barrier properties of the film. Based on the above results, a nanolaminate (NL) structure consisting of SiOx and SnOx deposited using plasma-enhanced ALD was measured using WVTR (H2O molecule diffusion) at 2.43 × 10–5 g/m2 day with a 10/10 nm NL structure and time-lag gas permeation measurement (H2 gas diffusion) for applications as passivation layers in various electronic devices.