Dual‐Gate Anti‐Ambipolar Transistor with Van der Waals ReS<sub>2</sub>/WSe<sub>2</sub> Heterojunction for Reconfigurable Logic Operations
Yoshitaka Shingaya, Amir Zulkefli, Takuya Iwasaki, Ryoma Hayakawa, Shu Nakaharai, Kenji Watanabe, Takashi Taniguchi, Yutaka Wakayama
Abstract
Abstract A dual‐gate anti‐ambipolar transistor (AAT) with a two‐dimensional ReS 2 and WSe 2 heterojunction is developed. The characteristic Λ‐shaped transfer curves yielded by the bottom‐gate voltage are effectively controlled by the top‐gate voltage. This feature is applied to logic operations, with the bottom‐ and top‐gate voltages acting as two input signals and the drain current ( I d ) monitored as an output signal. Importantly, a single dual‐gate AAT exhibits all the two‐input logic operations (AND, OR, XOR, NAND, NOR, and XNOR) under optimized input voltages. Additionally, drain voltage ( V d )‐induced switching between AND and OR logic operations is achieved. These features are advantageous for simplifying circuit design.