Ionizing radiation damage in 65 nm CMOS technology: Influence of geometry, bias and temperature at ultra-high doses
G. Borghello, Edoardo Lerario, F. Faccio, Henri D. Koch, G. Termo, Stefano Michelis, F. Márquez, F.R. Palomo, F. Muñoz
Topics & Concepts
Shallow trench isolationLarge Hadron ColliderRadiationOptoelectronicsCMOSMaterials scienceTransistorIrradiationRadiation damageRadiation hardeningPlanarIonizing radiationTrenchElectrical engineeringOpticsPhysicsNuclear physicsNanotechnologyEngineeringComputer scienceVoltageLayer (electronics)Computer graphics (images)Radiation Effects in ElectronicsSemiconductor materials and devicesAdvancements in Semiconductor Devices and Circuit Design