Spin Hall Effect in Topological Insulators
Pham Nam Hai
Abstract
The giant spin Hall effect (SHE) in topological insulators (TIs) is very attractive for applications to various spintronic devices, notably spin-orbit torque magnetoresistive random-access memory (SOT-MRAM). In this paper, we review the recent progress on the giant SHE in TIs, with emphasis on the role of topological surface states. We discuss current challenges and future prospects for TIs as a realistic material in SOT-MRAM.
Topics & Concepts
SpintronicsTopological insulatorMagnetoresistive random-access memoryCondensed matter physicsSpin Hall effectSpin (aerodynamics)Giant magnetoresistanceMagnetoresistanceEngineering physicsMaterials sciencePhysicsTopology (electrical circuits)Computer scienceMagnetic fieldElectrical engineeringSpin polarizationQuantum mechanicsRandom access memoryFerromagnetismEngineeringElectronThermodynamicsComputer hardwareTopological Materials and PhenomenaMagnetic properties of thin filmsQuantum and electron transport phenomena