Structural characteristics of 3C–SiC thin films grown on Si-face and C-face 4H–SiC substrates by high temperature chemical vapor deposition
Zhe Chuan Feng, Hao-Hsiung Lin, Bin Xin, Shi‐Jane Tsai, Vishal Saravade, Jeffrey Yiin, Benjamin Klein, Ian T. Ferguson
Topics & Concepts
EpitaxyMaterials scienceChemical vapor depositionCrystalliteScanning electron microscopeTransmission electron microscopyOptoelectronicsCrystallographyNanotechnologyComposite materialChemistryMetallurgyLayer (electronics)Silicon Carbide Semiconductor TechnologiesCopper Interconnects and ReliabilitySemiconductor materials and devices