Gate‐Tunable Negative Differential Resistance in Next‐Generation Ge Nanodevices and their Performance Metrics
Raphael Böckle, Masiar Sistani, Kilian Eysin, Maximilian G. Bartmann, Minh Anh Luong, M. den Hertog, Alois Lugstein, W. Weber
Abstract
Abstract In the quest to push the contemporary scientific boundaries in nanoelectronics, Ge is considered a key building block extending device performances, delivering enhanced functionalities. In this work, a quasi‐1D monocrystalline and monolithic Al–Ge–Al nanowire heterostructure are embedded into a novel field‐effect transistor architecture capable of combining Ge based electronics with an electrostatically tunable negative differential resistance (NDR) distinctly observable at room temperature. In this regard, a detailed study of the key metrics of NDR in Ge is presented. Most notably, a highly efficient and low‐footprint platform is demonstrated, paving the way for potential applications such as fast switching multi‐valued logic devices, static memory cells, or high‐frequency oscillators, all implemented in one fully complementary metal–oxide–semiconductor compatible Al‐Ge based device platform.