Low-Frequency Noise in Bridged-Grain Polycrystalline Silicon Thin-Film Transistors
Yuyang Yang, Meng Zhang, Lei Lü, Man Wong, Hoi Sing Kwok
Abstract
In this work, low-frequency noise (LFN) of bridged-grain (BG) polycrystalline silicon thin-film transistors (TFTs) is characterized and studied for the first time. The noise power spectral density (PSD) of drain current follows the classical 1/ <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${f}$ </tex-math></inline-formula> noise theory. The carrier number with the correlated mobility fluctuation model dominates the device 1/ <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${f}$ </tex-math></inline-formula> noise. Compared with normal TFTs, BG TFTs show a much smaller level of LFN, which is mainly attributed to grain boundary (GB) barrier lowering and trap density reduction.