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A Deeper Understanding of Well Charging Reliability with Circuit Relevant Test Structures

T.L. Tan, C. W. Eng, H. Xu, Janice Soon, E. Ebard, M. Siddabathula, B. F. Phoong, K. H. Poh, Manjunatha Prabhu, Xinyi Zhao, Jeoung Mo Koo, K. Cho, G.-W. Zhang

20222022 IEEE International Reliability Physics Symposium (IRPS)13 citationsDOI

Abstract

Antenna rules relating to well charging is becoming an important aspect to consider in design rule checks on the product apart from the conventional antenna to gate ratio design rules. In this paper, we provided a better understanding of the well charging phenomena in technologies with deep N-Well using different layout configuration test structures that are typical of a circuit. A new power law correlation with a well exponent value based on characterized PID gate leakage data is introduced. Moreover, a comparison of well charging design solutions is also presented and validated on the circuit-like test structures.

Topics & Concepts

Reliability (semiconductor)Computer scienceElectronic engineeringLogic gateTest dataAntenna (radio)Power (physics)Electrical engineeringReliability engineeringEngineeringQuantum mechanicsProgramming languagePhysicsElectrostatic Discharge in ElectronicsSemiconductor materials and devicesAdvancements in Semiconductor Devices and Circuit Design