Surface residual stress in amorphous SiO2 insulating layer on Si substrate near a Cu through-silicon via (TSV) investigated by nanoindentation
Hangeul Kim, Hansol Jeon, Dong‐Ju Lee, Ju‐Young Kim
Topics & Concepts
Materials scienceResidual stressNanoindentationThrough-silicon viaComposite materialSubstrate (aquarium)Layer (electronics)SiliconAmorphous solidStress (linguistics)Thermal expansionElectroplatingAmorphous siliconUltimate tensile strengthCrystalline siliconMetallurgyCrystallographyGeologyChemistryOceanographyLinguisticsPhilosophy3D IC and TSV technologiesElectronic Packaging and Soldering TechnologiesCopper Interconnects and Reliability