Controllable Growth of 2D V<sub>3</sub>S<sub>5</sub> Single Crystal by Chemical Vapor Deposition
Ping Wang, Feng Qi, Weikang Dong, Denan Kong, Yang Yang, Lin Jia, Jijian Liu, Chunyu Zhao, Dan Guo, Ruifeng Tian, Shoujun Zheng, Junxi Duan, Jiadong Zhou
Abstract
Abstract 2D intercalated vanadium chalcogenides have attracted intensive interest based on their physical properties and potential applications. However, controllable synthesis of the intercalated vanadium chalcogenides via chemical vapor deposition is still a big challenge. Here, a binary metal precursor co‐reaction growth mechanism to manipulate the evaporation rate of vanadium precursors is reported, thus the intercalated 2D V 1+ X S 2 – V 3 S 5 single crystal can be controllably synthesized. The quality of 2D V 3 S 5 nanosheets is identified by Raman spectroscopy and high‐resolution scanning transmission electron microscopy. Interestingly, a phase transition in 2D metallic V 3 S 5 nanosheets is observed at 20 K. Meanwhile, the resistance upturn and unsaturated negative magnetoresistance induced by electron–electron interaction is confirmed. This work proposes a new strategy to synthesize the 2D intercalated V x S y single crystals with different compositions for studying their excellent properties and potential applications.