Radiation damage study of SensL J-series silicon photomultipliers using 101.4 MeV protons
Alexei Ulyanov, David Murphy, Joseph Mangan, Viyas Gupta, W. Hajdas, Daithí de Faoite, Brian Shortt, L. Hanlon, S. McBreen
Abstract
Radiation damage of J-series silicon photomultipliers (SiPMs) has been studied in the context of using these photodetectors in future space-borne scintillation detectors. Several SiPM samples were exposed to 101.4 MeV protons, with 1 MeV neutron equivalent fluence ranging from 1.27×108 neq/cm2 to 1.23×1010 neq/cm2. After the irradiation, the SiPMs experienced a large increase in the dark current and noise, which may pose problems for long-running space missions in terms of power consumption, thermal control and detection of low-energy events. Measurements performed with a CeBr3 scintillator crystal showed that after exposure to 1.23×1010 neq/cm2 and following room-temperature annealing, the dark noise of a single 6 mm square SiPM at room temperature increased from 0.1 keV to 2 keV. Because of the large SiPM noise, the gamma-ray detection threshold increased to approximately 20 keV for a CeBr3 detector using a 4-SiPM array and 40 keV for a detector using a 16-SiPM array. Only a small effect of the proton irradiation on the average detector signal was observed, suggesting no or little change to the SiPM gain and photon detection efficiency.