Influence of deposition temperature on amorphous Ga <sub>2</sub> O <sub>3</sub> solar-blind ultraviolet photodetector
Wenhui Zhu, Lingxing Xiong, Jiawei Si, Zelin Hu, Xiang Gao, Linyun Long, Tao Li, Rongqiao Wan, Lei Zhang, Liancheng Wang
Abstract
Abstract Solar-blind ultraviolet photodetectors have potential applications in space communication, ozone hole monitoring and missile tracking. Amorphous Ga 2 O 3 (a-Ga 2 O 3 ) films are deposited by a simple radio frequency magnetron sputtering at different deposition temperatures. Fully transparent devices on a quartz substrate are fabricated with high responsivity, wide detection range and good repeatability. With the increase of Ga 2 O 3 deposited temperature, the concentration of oxygen vacancy increases accordingly, leading to a wide detection range from 250 to 325 nm and high responsivity (138 A W −1 at 5 V bias). The underlying mechanism has been discussed and analyzed. Our results should advance the application of a-Ga 2 O 3 -based ultraviolet photodetectors and other relevant devices.